Numerical modeling of <i>SiC</i> by low-pressure chemical vapor deposition from methyltrichlorosilane

Kang Guan; Yong Gao; Qingfeng Zeng; Xingang Luan; Yi Zhang; Laifei Cheng; Jianqing Wu; Zhenya Lu

doi:10.1016/j.cjche.2020.03.035

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Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

Materials and Product Engineering | Updated：2026-01-06

- Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane
- Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane
- 中国化学工程学报（英文版） 2020年第6期页码：1733-1743
- Affiliations：
  
  1. School of Materials Science and Engineering, South China University of Technology,Guangzhou,China,510640
  2. Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University,Xi'an,China,710072
  3. MSEA International Institute for Materials Genome, Gu'an,China,065500
- Author bio：
- Funds：
  
  We thank the National Key R&D Program of China (Grants No. 2017YFB0703200), National Natural Science Foundation of China (Grants Nos. 51702100, 51972268) and China Postdoctoral Science Foundation (Grants No. 2018M643075) for financial support.
- DOI：10.1016/j.cjche.2020.03.035
  中图分类号：
- 纸质出版：2020
- Accepted：
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Kang Guan, Yong Gao, Qingfeng Zeng, 等. Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane[J]. 中国化学工程学报（英文版）, 2020,(6):1733-1743. DOI: 10.1016/j.cjche.2020.03.035.

Kang Guan, Yong Gao, Qingfeng Zeng, et al. Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane[J]. Chinese Journal of Chemical Engineering, 2020, (6): 1733-1743. DOI: 10.1016/j.cjche.2020.03.035.
Kang Guan, Yong Gao, Qingfeng Zeng, 等. Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane[J]. 中国化学工程学报（英文版）, 2020,(6):1733-1743. DOI: 10.1016/j.cjche.2020.03.035. DOI：

Kang Guan, Yong Gao, Qingfeng Zeng, et al. Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane[J]. Chinese Journal of Chemical Engineering, 2020, (6): 1733-1743. DOI: 10.1016/j.cjche.2020.03.035. DOI：

摘要

Abstract

The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition (LPCVD) or low-pressure chemical vapor infiltration (LPCVI). In the field of ceramic matrix composites (CMCs)

methyltrichlorosilane (CH

SiCl

MTS) is the most widely used source gas system for SiC

because stoichiometric SiC deposit can be facilitated at 900℃-1300℃. However

the reliability and accuracy of existing numerical models for these processing conditions are rarely reported. In this study

a comprehensive transport model was coupled with gas-phase and surface kinetics. The resulting gas-phase kinetics was confirmed

via

the measured concentration of gaseous species. The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method. Surface kinetics were then proposed and shown to reproduce the experimental results. The proposed simulation strategy can be used for different material systems

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Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

DOI：10.1016/j.cjche.2020.03.035

摘要

Abstract

关键词

Keywords

references