Thermodynamic behaviors of SiCl<sub>2</sub> in silicon deposition by gas phase zinc reduction of silicon tetrachloride

Yanqing Hou; Zhifeng Nie; Gang Xie; Rongxing Li; Xiaohua Yu; Plant A. Ramachandran

doi:10.1016/j.cjche.2014.04.001

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Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride

化工热力学 | Updated：2026-01-06

- Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride
- Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride
- 中国化学工程学报（英文版） 2015年23卷第3期页码：552-558
- Affiliations：
  
  1. State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology,Kunming,China,650093
  2. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology,Kunming,China,650093
  3. Kunming Metallurgical Research Institute,Kunming,China,650031
  4. Department of Energy, Environmental and Chemical Engineering, Washington University in St. Louis, St. Louis,MO,USA,63130
- Author bio：
- Funds：
- DOI：10.1016/j.cjche.2014.04.001
  中图分类号：
- 纸质出版：2015
- Accepted：
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Yanqing Hou, Zhifeng Nie, Gang Xie, 等. Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride[J]. 中国化学工程学报（英文版）, 2015,23(3):552-558. DOI: 10.1016/j.cjche.2014.04.001.

in silicon deposition by gas phase zinc reduction of silicon tetrachloride[J]. , 2015, 23(3): 552-558.
Yanqing Hou, Zhifeng Nie, Gang Xie, 等. Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride[J]. 中国化学工程学报（英文版）, 2015,23(3):552-558. DOI: 10.1016/j.cjche.2014.04.001. DOI：

in silicon deposition by gas phase zinc reduction of silicon tetrachloride[J]. , 2015, 23(3): 552-558. DOI： 10.1016/j.cjche.2014.04.001.

摘要

Abstract

The modified Siemens process

which is the major process of producing polycrystalline silicon through current technologies

is a high temperature

slow

semi-batch process and the product is expensive primarily due to the large energy consumption. Therefore

the zinc reduction process

which can produce solar-grade silicon in a cost effective manner

should be redeveloped for these conditions. The SiCl

generation ratio

which stands for the degree of the side reactions

can be decomposed to SiCl

and ZnCl

in gas phase zinc atmosphere in the exit where the temperature is very low. Therefore

the lower SiCl

generation ratio is profitable with lower power consumption. Based on the thermodynamic data for the related pure substances

the relations of the SiCl

generation ratio and pressure

temperature and the feed molar ratio (

SiCl

) are investigated and the graphs thereof are plotted. And the diagrams of

at standard atmosphere pressure have been plotted to account for the influence of temperature on the SiCl

generation ratio. Furthermore

the diagram of

at different pressures have also been plotted to give an interpretation of the influence of pressure on the SiCl

generation ratio. The results show that SiCl

generation ratio increases with increasing temperature

and the higher pressure and excess gas phase zinc can restrict SiCl

generation ratio. Finally

suitable operational conditions in the practical process of polycrystalline silicon manufacture by gas phase zinc reduction of SiCl

have been establishedwith 1200 K

0.2MPa and the feedmolar ratio (

SiCl

) of 4 at the entrance.Under these conditions

SiCl

generation ratio is very low

which indicates that the side reactions can be restricted and the energy consumption is reasonable.

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Thermodynamic behaviors of SiCl2 in silicon deposition by gas phase zinc reduction of silicon tetrachloride

Thermodynamic behaviors of SiCl2 in silicon deposition by gas phase zinc reduction of silicon tetrachloride

DOI：10.1016/j.cjche.2014.04.001

摘要

Abstract

关键词

Keywords

references

Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride

Thermodynamic behaviors of SiCl₂ in silicon deposition by gas phase zinc reduction of silicon tetrachloride