Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System

张攀; 王伟文; 陈光辉; 李建隆

doi:10.1016/S1004-9541(09)60169-5

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Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System

Updated：2026-01-06

- Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System
- Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System
- 中国化学工程学报（英文版） 2011年19卷第1期页码：1-9
- Affiliations：
  
  1. Institute of Electronmechanical Engineering, Qingdao University of Science and Technology,Qingdao,China,266061
  2. Institute of Chemical Engineering, Qingdao University of Science and Technology,Qingdao,China,266042
- Author bio：
- Funds：
  
  Supported by the Natural Science Foundation of Shandong Province of China (ZR2009BM011);the Doctor Foundation of Shandong Province of China (BS2010NJ005)
- DOI：10.1016/S1004-9541(09)60169-5
  中图分类号：
- 纸质出版：2011
- Accepted：
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张攀, 王伟文, 陈光辉, 等. Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System[J]. 中国化学工程学报（英文版）, 2011,19(1):1-9.

ZHANG Pan, WANG Weiwen, CHENG Guanghui, LI Jianlong. Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System[J]. , 2011, 19(1): 1-9.
张攀, 王伟文, 陈光辉, 等. Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System[J]. 中国化学工程学报（英文版）, 2011,19(1):1-9. DOI： 10.1016/S1004-9541(09)60169-5.

ZHANG Pan, WANG Weiwen, CHENG Guanghui, LI Jianlong. Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System[J]. , 2011, 19(1): 1-9. DOI： 10.1016/S1004-9541(09)60169-5.

摘要

Abstract

This paper presents the numerical investigation of the effects of momentum

thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three chemical vapor deposition (CVD) reactors. A two-dimensional model for the gas flow

heat transfer

and mass transfer was coupled to the gas-phase reaction and surface reaction mechanism for the deposition of polycrystalline silicon from trichlorosilane (TCS)-hydrogen system. The model was verified by comparing the simulated growth rate with the experimental and numerical data in the open literature. Computed results in the reactors indicate that the deposition characteristics are closely related to the momentum

thermal and mass boundary layer thickness. To yield higher deposition rate

there should be higher concentration of TCS gas on the substrate

and there should also be thinner boundary layer of HCl gas so that HCl gas could be pushed away from the surface of the substrate immediately.

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