Preparation of WO<sub>3</sub> thin films by dip film-drawing for photoelectrochemical performance

Dongbo Xu; Lili Li; Weiqiang Fan; Fagen Wang; Hongye Bai; Baodong Mao; Weidong Shi

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Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance

Energy, Resources and Environmental Technology | Updated：2026-01-06

- Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance
- Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance
- 中国化学工程学报（英文版） 2019年27卷第5期页码：1207-1211
- Affiliations：
  
  1. School of Energy and Power Engineering, Jiangsu University,Zhenjiang,China,212013
  2. School of Chemistry and Chemical Engineering, Jiangsu University,Zhenjiang,China,212013
- Author bio：
- Funds：
- DOI：
  中图分类号：
- 纸质出版：2019
- Accepted：
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Dongbo Xu, Lili Li, Weiqiang Fan, 等. Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance[J]. 中国化学工程学报（英文版）, 2019,27(5):1207-1211.

thin films by dip film-drawing for photoelectrochemical performance[J]. 中国化学工程学报, 2019, 27(5): 1207-1211.
Dongbo Xu, Lili Li, Weiqiang Fan, 等. Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance[J]. 中国化学工程学报（英文版）, 2019,27(5):1207-1211. DOI：

thin films by dip film-drawing for photoelectrochemical performance[J]. 中国化学工程学报, 2019, 27(5): 1207-1211. DOI：

摘要

Abstract

Here we report the WO

thin films on F-doped SnO

conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple

convenient

economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3

12 and 15 times for prepared different thicknesses of WO

thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements

which include scan linear sweep

repeated on/off illumination cycles

electrochemical impedance spectroscopy and incident photon to current conversion efficiency

respectively. The results showed that the WO

thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm

-2

at 1.23 V

versus

RHE.

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Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

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摘要

Abstract

关键词

Keywords

references

Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance

Preparation of WO₃ thin films by dip film-drawing for photoelectrochemical performance