Modulating titanium dioxide electron transport layer by self-doping for high-efficiency carbon-based perovskite solar cells
|Updated:2026-01-06
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Modulating titanium dioxide electron transport layer by self-doping for high-efficiency carbon-based perovskite solar cells
Chinese Journal of Chemical EngineeringVol. 85, Issue 9, Pages: 348-354(2025)
Affiliations:
Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University,Guangzhou,China,510642
Xin Peng, Rong Huang, Wenran Wang, Jianxin Zhang, Zhenxiao Pan, Yueping Fang, Huashang Rao, Xinhua Zhong, Guizhi Zhang. Modulating titanium dioxide electron transport layer by self-doping for high-efficiency carbon-based perovskite solar cells[J]. Chinese Journal of Chemical Engineering, 2025, 85(9): 348-354.
DOI:
Xin Peng, Rong Huang, Wenran Wang, Jianxin Zhang, Zhenxiao Pan, Yueping Fang, Huashang Rao, Xinhua Zhong, Guizhi Zhang. Modulating titanium dioxide electron transport layer by self-doping for high-efficiency carbon-based perovskite solar cells[J]. Chinese Journal of Chemical Engineering, 2025, 85(9): 348-354.DOI: 10.1016/j.cjche.2025.03.022.
Modulating titanium dioxide electron transport layer by self-doping for high-efficiency carbon-based perovskite solar cells
it is important to construct electron transport layer (ETL) with ideal surface morphology and advantageous electron transport dynamics. In this work
a functional TiO
2
ETL is designed and constructed based on a novel Ti
3+
self-doping strategy. Experimental results indicate that Ti
3+
dopant can optimize TiO
2
film crystallization process by facilitating the assembly of precursor particles
reducing the content of pore-forming reagent
and enhancing the adhesion of precursors to glass substrate in film formation process. Therefore
the modified surface morphology inhibits the formation of undesired hole structure. Besides
self-doping moderately generates oxygen vacancies on TiO
2
surface and a shallower TiO
2
Fermi energy level. These not only result in a stronger interfacial electronic coupling
but also establish an advantageous energy band alignment. These merits optimize interfacial electron transfer dynamics by inhibiting recombination loss and facilitating electron extraction. Benefiting from the optimized TiO
2
ETL
hole transport layer (HTL)-free carbon electrode based CsPbI
3
PSCs deliver a high efficiency of 18.62%
representing one of the highest levels in this field.
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