) is demanded as an electronic-grade chemical to meet the stringent requirements of the rapidly developing semiconductor industry. The high requirement for ultra-high-purity SiCl
4
has created the need for a high-efficient process for reducing energy consumption as well as satisfying product quality. In this paper
a mass of production technology of ultra-high-purity SiCl
4
was successfully developed through chlorination reaction in the ultraviolet (UV)-based photo microreactor coupled with the distillation process. The influences of key operational parameters
including temperature
pressure
UV wavelength and light intensity on the product quality
especially for hydrogen-containing impurities
were quantified by the infrared transmittance of Fourier transform infrared spectroscopy (FT-IR) at 2185 cm
-1
and 2160 cm
-1
indicating that characteristic vibrational modes of Si—H bonds
as well as the operating conditions of distillation were also investigated as key factors for metal impurities removing. The advanced inte
nsification of SiCl
4
manufactured by the integration of photo microreactor and distillation achieves the products with superior specifications higher than the standard commercial products.
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