TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

Bar?? ?im?ek

doi:10.1016/j.cjche.2018.08.004

Your Location：

Home >

Browse articles >

TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

Materials and Product Engineering | Updated：2026-01-06

- TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity
- Chinese Journal of Chemical Engineering Vol. 27, Issue 3, Pages: 685-694(2019)
- Affiliations：
  
  Department of Chemical Engineering, Faculty of Engineering, Çank?r? Karatekin University, Uluyaz? Kampüsü 18200, Merkez, Çank,r,Turkey
- Author bio：
- Funds：
- DOI：10.1016/j.cjche.2018.08.004
  CLC：
- Published：2019
- Accepted：
Scan QR Code
Barış Şimşek. TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity[J]. Chin.J.Chem.Eng., 2019, 27(3): 685-694.
DOI：

Barış Şimşek. TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity[J]. Chin.J.Chem.Eng., 2019, 27(3): 685-694. DOI： 10.1016/j.cjche.2018.08.004.

摘要

Abstract

Chemical inhomogeneity of chemical vapor deposition (CVD) grown graphene compromises its usage in highperformance devices. In this study

TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2D/G intensity ratio

87.96% improvement in the mean D/G intensity ratio

56.07% improvement in the standard deviation D/G intensity ratio

25.21% improvement in the standard deviation 2D/G intensity ratio

and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the 0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2D/G intensity ratio

respectively. Graphene having 11% lower mean D/G intensity ratio (low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.

关键词

Keywords

references

Views

255

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

Fluorinated poly(p-terphenyl isatin)-based anion exchange membranes with microphase-separated structures for water electrolysis

Bubble dispersion intensification via flow guidance and drainage in a bubble column with internals

Enhanced plasma-catalytic steam reforming of methane to methanol on a hydrophobically modified Cu/silicalite-1 catalyst

Understanding temperature-dependent degradation in proton exchange membrane water electrolyzer: The critical role of porous transport layer

Biochar as a structure-tunable stationary phase for column chromatographic fractionation of bio-oil

Related Author

No data

Related Institution

No data

⁰