Cuprous oxide (Cu

2

O) thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60℃. The effects of sodium thiosulfate on the electrochemical deposition of Cu

2

O films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.58 V vs. SCE and characterized by X-ray diffraction (XRD)

Fourier transform infrared spectroscopy (FTIR)

scanning electron microscopy (SEM)

and optical

photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu

2

O films had a pure cubic phase with a marked preferential orientation peak along (200) plane and with lattice constants a=b=c=0.425 nm. FTIR results confirmed the presence of Cu

2

O films at peak 634 cm

-1

. SEM images of Cu

2

O films showed a better compactness and spherical-shaped composition. Optical properties of Cu

2

O films reveal a high optical transmission (80%) and high absorption coefficient (α 104 cm

-1

) in visiblelight region

. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu

2

O films had n-type semiconductor conduction

which confirmed by Hall Effect measurements. Electrical properties of Cu

2

O films showed a low electrical resistivity of 61.30 Ω·cm

-1

carrier concentration of -4.94×10

15

cm

-3

and mobility of 20.61 cm

2

·V

-1

·s

-1

. The obtained Cu

2

O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells.