Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2
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Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2
Chinese Journal of Chemical EngineeringVol. 17, Issue 3, Pages: 419-426(2009)
Affiliations:
1. State Key Lab of Multi-phase Complex Systems, Ins1. State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS,Beijing,China,100190
2. Graduate University of Chinese Academy of Sciences,Beijing,China,100049
isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH
2
Cl
2
SiHCl
3
and SiCl
2
formed from decomposition of SiCl
4
and CH
4
contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol
-1
was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy
X-ray diffraction and transmission electron microscopy
these analysis showed that the deposited thin film consisted of pure phase of the β-SiC
the growth morphology of β-SiC differs from hexangular facet to granular pebble structures
which varied with substrate length and CVD temperature.
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