conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple
convenient
economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3
6
9
12 and 15 times for prepared different thicknesses of WO
3
thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements
which include scan linear sweep
repeated on/off illumination cycles
electrochemical impedance spectroscopy and incident photon to current conversion efficiency
respectively. The results showed that the WO
3
thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm
-2
at 1.23 V
versus
RHE.
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