Dual Mo and Se vacancies in dual S-scheme heterojunction suppress charge recombination and boost redox capability for simultaneous removal of tetracycline and Cr(VI)

Tian Pengfei; Shen Yunan; Hua Yuzhe; Zou Xiyu; Ren Guangmin; Guo Qingjie; Tian Hongjing

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Dual Mo and Se vacancies in dual S-scheme heterojunction suppress charge recombination and boost redox capability for simultaneous removal of tetracycline and Cr(VI)

Updated：2026-09-17

- Dual Mo and Se vacancies in dual S-scheme heterojunction suppress charge recombination and boost redox capability for simultaneous removal of tetracycline and Cr(VI)
- Chinese Journal of Chemical Engineering Vol. 95, Issue 7, Pages: 113-128(2026)
- Affiliations：
  
  College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
  State Key Laboratory of Advanced Optical Polymer and Manufacturing Technology, Yantai 264000, China
- Author bio：
  
  *Corresponding authors. E-mail addresses:17568022691@163.com(G. Ren)
  *Corresponding authors. E-mail addresses:hj_tian@qust.edu.cn(H. Tian).
- Funds：
- DOI：
  CLC：
- Received：08 October 2025，
  
  Revised：2026-01-19，
  
  Accepted：23 January 2026，
  
  Online First：16 February 2026，
  
  Published：2026-07
- Accepted：
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Tian Pengfei, Shen Yunan, Hua Yuzhe, et al. Dual Mo and Se vacancies in dual S-scheme heterojunction suppress charge recombination and boost redox capability for simultaneous removal of tetracycline and Cr(VI)[J]. Chinese Journal of Chemical Engineering, 2026, 95(7): 113-128.
DOI：

Tian Pengfei, Shen Yunan, Hua Yuzhe, et al. Dual Mo and Se vacancies in dual S-scheme heterojunction suppress charge recombination and boost redox capability for simultaneous removal of tetracycline and Cr(VI)[J]. Chinese Journal of Chemical Engineering, 2026, 95(7): 113-128. DOI：

摘要

Abstract

Mo vacancy (V

) and Se vacancy (V

) are doped into Bi

MoO

(BMO) and ZnSe

respectively

while they are mechanically ground and mixed to fabricate the dual S-scheme heterojunction. The lattice distortion is observed at the interface between V

-BMO and V

-ZnSe/CdSe (V

-ZCS) while XPS results confirm the construction of the dual S-scheme heterojunction V

-BMO/V

-ZCS (V

-BZCS). DFT simulation demonstrate that the doping of V

and V

lead to more electrons transferring spontaneously through the heterojunction interfaces and promote the IEF strength accordingly. Both

in-situ

XPS and fs-TAS characterization prove the presence of a fast photoinduced charge transfer pathway from V

-BMO to V

-ZnSe under LED light irradiation. V

and V

function as the holes trapping center in V

-BMO and the electron trapping center in V

-ZCS

respectively

thereby effectively suppressing the electron-hole recombination

which enhances the redox capability of V

-BZCS together with the fast charge transferring. During the photocatalytic degradation experiments for the wastewater containing both tetracycline (TC) and Cr(VI)

both the TC and the Cr(VI) degradation efficiency of V

-BZCS are competitive under either LED or xenon lamp irradiation in comparison with some reported catalysts. Dual doping of V

and V

were testified to amplify the bi-directional promotion effects (BPEs) between TC and

Cr(VI).

关键词

Keywords

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